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Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Zhongshi Zhihui Technology (suzhou) Co., Ltd.

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Home / Products / Signal Power Amplifier / Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC /

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Signal Jammer Module

 [64]

Signal Jammer PCB

 [38]

Signal Power Amplifier

 [89]

Signal Booster

 [35]

Voltage Controlled Oscillator

 [33]

Gain Block

 [9]

Varactor Diode

 [4]
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Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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City:suzhou
Province/State:jiangsu
Country/Region:china
Contact Person:MsZhou
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Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
  • Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
  • Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
  • Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
  • Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Products Detailed
Innotion High Efficiency 20W Gallium Nitride 28V DC-6GHz 20W RF Power Transistor Product Description Innotion’s YP601820T is a 20-watt, unmatched ...
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